Single Crystal silicon carbide (4H-SiC) wafer pieces of 2 mm diameter x 0.5
mm thickness were measured for thermal conductivity. SSTR-F testing
results of 335 W/m·K +/- 28 W/m·K, correlated well with literature values
(364 W/m·K) and traditional Time-domain Thermoreflectance (TDTR)
measurements of 324 W/m·K.
Laser Thermal Analysis
Bulk High Thermal Conductivity – Small Samples
Single Crystal silicon carbide (4H-SiC) wafer pieces of 2 mm diameter x 0.5mm thickness were measured for thermal conductivity.