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Get thermal data in just days, not weeks or months.

Fast

Stop waiting months for data. We often can test your samples on the same day they arrive, sending you data faster than you’ve ever experienced.

Accurate

Our tools can measure the thermal conductivity of materials with values ranging from 0.01 to 3000 W m-1 K-1, with +/- 2% reproducibility and +/- 1% repeatability.

Easy

All you need to do is tell us about your samples and send them to us. We’ll take care of preparation, testing, and analysis.

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As thermal scientists ourselves, we’ve spent years frustrated about the inability to get accurate, rapid thermal conductivity and thermal resistance measurements, especially for thin films. That’s why we created the SSTR-F (our first instrument) to make thermal measurement easy and accessible to every company, every university, and every thermal modeling team. Since then, SSTR-F has evolved into FASTR. We also launched TOPS for bulk materials thermal conductivity measurements regardless of shape of size in early 2025.
Combining thermal transport, optics, materials physics, machine learning, AI, and intelligent design, we’re committed to helping you get the thermal data you need to fuel research and development, in-line metrology, and quality assurance.

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Our Clients Include Industry, Academia, and Government.

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Laser Thermal’s instruments represent entirely new and breakthrough ways to measure thermal metrology.

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Validated results

SSTR-F measures the thermal conductivity of Corning Pyroceram 9606 and Corning high purity fused silica (HPFS) 7980 to within 5% of their published values.
Additional validation was provided by measuring samples from the same piece of material using the Transient Plane Source technique.
Pyroceram is no longer available from NIST but was measured on similar material to the material that was validated as a Certified Reference Material.
Corning HPFS was procured from a distributor of HPFS 7980 wafers.

	Literature Value	TPS Measurement	SSTR-F Measurement
Pyroceram 9606	4.07 +/- .26	3.95	3.95 +/- 0.2
HPFS 7980	1.38	1.39	1.39 +/- 0.09

Unparalleled reliability

Thermal conductivity measurements: Accuracy +/- 10%, Repeatability +/- 0.5%, Reproducibility +/- 1%
Accurate thermal conductivity measurements of materials in agreement with literature values
With exceptional instrumentation reliability and repeatability, SSTR-F offers unprecedented measurement stability on a daily basis for any user, exemplified by the SSTR-F data shown below. Spread in randomly sampled spots are sample related, not measurement driven.

Source

20 SSTR-F measurements at same spot

20 SSTR-F measurements at random spots

Turnkey testing

Our patented fiber-optic design enables turnkey, automated testing of thermal conductivity.
High-throughput SSTR-F testing of multiple samples facilitates, for example, screening the thermal conductivity of different thin films processed under different conditions
Defects, stresses, compositional differences, and changes in density and microstructure that occur up during film growth result in changes in thermal conductivity, easily and rapidly identified vis SSTR-F

SSTR-F data on 4 different 200 nm dielectric films on silicon with thermal conductivity ranging from ~0.35 W/m/K up to 1.8 W/m/K. SSTR-F allows for easy, rapid and automated identification of different temperature rises based on the thermal conductivity of the different films.

Nanoscale to bulk

Thermal conductivity of nanoscale thin films

SSTR is ideal for your thin film thermal conductivity testing needs.
In addition to measurements of bulk wafers and substrates (source 1, source 2), SSTR has the unprecedented spatial resolution to measure the thermal conductivity of thin films.
For example, SSTR can measure the thermal conductivity of single nanometer thick ALD grown thin films or micron thick AlN films (source).

SSTR measurements on ALD grown ultrathin film amorphous gate dielectrics (compared to TDTR) (source).

SSTR measurements of AlN crystalline thin films.2 SSTR data (temperature rise vs. power) on right for AlN film and silicon wafer control.