How Can The U.S. Boost Domestic Semiconductor Manufacturing Capacity?

Five Key Challenges for Increasing U.S. Domestic Semiconductor Manufacturing Capacity

While the United States remains a world leader in semiconductors, domestic manufacturing capacity has declined substantially in recent years as more and more firms have adopted a “fabless” model and outsourced production internationally. Today, the U.S. makes only 12 percent of the world’s semiconductors, compared to 37 percent in the 1990’s.

Private- and public-sector leaders increasingly recognize that poorly diversified supply chains represent a substantial economic risk. Recent legislation, like the CHIPS and Science Act of 2022 and the Inflation Reduction Act, offer substantial incentives for investment in new domestic manufacturing facilities, and a boom in construction is already underway.

As US semiconductor manufacturers work to answer the call for renewed leadership in domestic chip manufacturing, what are the most important challenges that will need to be addressed?

We cover five of the most important in this whitepaper, including critical considerations such as:

Why it will be critical to remain ahead of the curve on R&D.
Why new production must be aligned carefully to end-user market requirements (such as the older process nodes utilized by the automotive industry).
Why chip makers will need to leverage the competitive advantages of the US labor market to overcome higher costs for talent.

For a demonstration of our SSTR-F in action to gain insight into the kind of information and potential competitive advantage it can offer, check out our demo video:

Download the Whitepaper

Nanoscale to bulk

Thermal conductivity of nanoscale thin films

SSTR is ideal for your thin film thermal conductivity testing needs.
In addition to measurements of bulk wafers and substrates (source 1, source 2), SSTR has the unprecedented spatial resolution to measure the thermal conductivity of thin films.
For example, SSTR can measure the thermal conductivity of single nanometer thick ALD grown thin films or micron thick AlN films (source).

SSTR measurements on ALD grown ultrathin film amorphous gate dielectrics (compared to TDTR) (source).

SSTR measurements of AlN crystalline thin films.2 SSTR data (temperature rise vs. power) on right for AlN film and silicon wafer control.

Validated results

SSTR-F measures the thermal conductivity of Corning Pyroceram 9606 and Corning high purity fused silica (HPFS) 7980 to within 5% of their published values.
Additional validation was provided by measuring samples from the same piece of material using the Transient Plane Source technique.
Pyroceram is no longer available from NIST but was measured on similar material to the material that was validated as a Certified Reference Material.
Corning HPFS was procured from a distributor of HPFS 7980 wafers.

	Literature Value	TPS Measurement	SSTR-F Measurement
Pyroceram 9606	4.07 +/- .26	3.95	3.95 +/- 0.2
HPFS 7980	1.38	1.39	1.39 +/- 0.09

Unparalleled reliability

Thermal conductivity measurements: Accuracy +/- 10%, Repeatability +/- 0.5%, Reproducibility +/- 1%
Accurate thermal conductivity measurements of materials in agreement with literature values
With exceptional instrumentation reliability and repeatability, SSTR-F offers unprecedented measurement stability on a daily basis for any user, exemplified by the SSTR-F data shown below. Spread in randomly sampled spots are sample related, not measurement driven.

Source

20 SSTR-F measurements at same spot

20 SSTR-F measurements at random spots

Turnkey testing

Our patented fiber-optic design enables turnkey, automated testing of thermal conductivity.
High-throughput SSTR-F testing of multiple samples facilitates, for example, screening the thermal conductivity of different thin films processed under different conditions
Defects, stresses, compositional differences, and changes in density and microstructure that occur up during film growth result in changes in thermal conductivity, easily and rapidly identified vis SSTR-F

SSTR-F data on 4 different 200 nm dielectric films on silicon with thermal conductivity ranging from ~0.35 W/m/K up to 1.8 W/m/K. SSTR-F allows for easy, rapid and automated identification of different temperature rises based on the thermal conductivity of the different films.