When the materials change, measurement has to follow Thermal measurement is no longer a straightforward task. Many of the materials driving innovation today do not behave in ways that conventional techniques were designed to handle. Methods like laser flash or guarded hot plate rely on assumptions that break down quickly in modern applications: uniform structure,...
| Literature Value | TPS Measurement | SSTR-F Measurement | |
| Pyroceram 9606 | 4.07 +/- .26 | 3.95 | 3.95 +/- 0.2 |
| HPFS 7980 | 1.38 | 1.39 | 1.39 +/- 0.09 |
20 SSTR-F measurements at same spot
20 SSTR-F measurements at random spots
SSTR-F data on 4 different 200 nm dielectric films on silicon with thermal conductivity ranging from ~0.35 W/m/K up to 1.8 W/m/K. SSTR-F allows for easy, rapid and automated identification of different temperature rises based on the thermal conductivity of the different films.
SSTR measurements on ALD grown ultrathin film amorphous gate dielectrics (compared to TDTR) (source).
SSTR measurements of AlN crystalline thin films.2 SSTR data (temperature rise vs. power) on right for AlN film and silicon wafer control.